Biexciton formation in CdxZn1xSe/ZnSe quantum-dot and quantum-well structures

K. Herz, T. Kümmell, G. Bacher, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Phys. Rev. B 56, 15261 – Published 15 December 1997
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Abstract

The dimensionality dependence of the biexciton formation process is investigated by comparing (Cd,Zn)Se/ ZnSe quantum-dot and quantum-well structures using time-resolved photoluminescence (PL) spectroscopy. Modeling the onset of the biexciton PL signal with a system of rate equations, we obtain a biexciton formation coefficient of about 4×1010cm2/ps for 35-nm quantum dots and of 0.2×1010cm2/ps for the quantum-well reference, respectively, indicating a distinct enhancement of the biexciton formation efficiency in quantum dots. By analyzing the spectral line shape of the PL signal, an increase of the biexciton binding energy from 6.4 meV in the case of the quantum-well reference, to 11.3 meV for the quantum dots, is determined.

  • Received 31 July 1997

DOI:https://doi.org/10.1103/PhysRevB.56.15261

©1997 American Physical Society

Authors & Affiliations

K. Herz, T. Kümmell, G. Bacher, and A. Forchel

  • Technische Physik, Universität Würzburg, D-97074 Würzburg, Germany

B. Jobst, D. Hommel, and G. Landwehr

  • Experimentelle Physik III, Universität Würzburg, D-97074 Würzburg, Germany

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Vol. 56, Iss. 23 — 15 December 1997

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