Abstract
A simple theoretical six-band finite difference method is developed and applied to calculate the electronic band structures and electronic Landau-level structures of the symmetric and asymmetric quantum wells (QW’s). The QW may exhibit a semiconductor-semimetal transition by changing the Al composition in the layer. The cyclotron-resonance splitting in the semiconducting structures is due to the large InAs conduction-band nonparabolicity and Zeeman effect. Broken-gap type-II semimetallic QW, in which the conduction-valence Landau-level mixing can yield a significant spin splitting for the InAs conduction-band Landau levels, produces a prominent electron double-line structure in the cyclotron-resonance spectra, whether the QW is symmetric or asymmetric. Strong oscillations in the electron cyclotron-resonance mass, amplitude, and linewidth are evident. The abnormal cyclotron-resonance mass jumps, amplitude minima, and linewidth maxima occurring near the even filling factors are due to the conduction-valence Landau-level mixing effect. These results are in good agreement with the experimental results.
- Received 19 November 1996
DOI:https://doi.org/10.1103/PhysRevB.56.13242
©1997 American Physical Society