Enhanced exciton-phonon scattering in InxGa1xAs/GaAs quantum wires

W. Braun, M. Bayer, A. Forchel, H. Zull, J. P. Reithmaier, A. I. Filin, and T. L. Reinecke
Phys. Rev. B 56, 12096 – Published 15 November 1997
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Abstract

We have investigated the dephasing of excitons due to scattering by acoustic phonons in quantum wires by means of temperature-dependent time-integrated four-wave mixing. Free-standing In0.135Ga0.865As/GaAs quantum wires with lateral sizes between 29 and 85 nm have been studied. By measuring the phase relaxation time of the excitonic resonance at low carrier densities, we have determined the homogeneous linewidth. From the temperature dependence of the homogeneous linewidth at temperatures between 5 and 30 K, we have evaluated the temperature coefficient γac, which is a measure for the exciton-acoustic phonon scattering strength. γac is found to increase with decreasing wire width. It is shown that this dependence on the wire width is consistent with a microscopic theory of exciton-acoustic phonon coupling.

  • Received 3 April 1997

DOI:https://doi.org/10.1103/PhysRevB.56.12096

©1997 American Physical Society

Authors & Affiliations

W. Braun, M. Bayer, A. Forchel, H. Zull, and J. P. Reithmaier

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

A. I. Filin

  • Institute for Solid State Physics, 142432, Chernogolovka, Moscow Region, Russia

T. L. Reinecke

  • Naval Research Laboratory, Washington, D.C. 20375

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Issue

Vol. 56, Iss. 19 — 15 November 1997

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