Structural model for the Si(111)-4<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mo>×</mo></math></span>1-In reconstruction

A. A. Saranin; A.V. Zotov; K. V. Ignatovich; V. G. Lifshits; T. Numata; O. Kubo; H. Tani; M. Katayama; K. Oura

doi:10.1103/PhysRevB.56.1017

Structural model for the Si(111)-4 $\times$ 1-In reconstruction

A. A. Saranin, A.V. Zotov, K. V. Ignatovich, V. G. Lifshits, T. Numata, O. Kubo, H. Tani, M. Katayama, and K. Oura

Phys. Rev. B 56, 1017 – Published 15 July 1997

Abstract

A $π$ -bonded-chain-stacking-fault $(π$ -SF) model is proposed for the Si(111)4 $\times$ 1-In surface structure. The model incorporates 4 $\times$ 1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings while sevenfold Si rings form $π$ -bonded chains between In ridges.

Received 7 February 1997

DOI:https://doi.org/10.1103/PhysRevB.56.1017

Authors & Affiliations

A. A. Saranin

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
Far Eastern State University, Faculty of Physics and Engineering, 690000 Vladivostok, Russia

A.V. Zotov

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
Vladivostok University of Economics and Service, 690600 Vladivostok, Russia

K. V. Ignatovich

Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia

V. G. Lifshits

Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
Far Eastern State University, Faculty of Physics and Engineering, 690000 Vladivostok, Russia;
Vladivostok University of Economics and Service, 690600 Vladivostok, Russia

T. Numata, O. Kubo, H. Tani, M. Katayama, and K. Oura

Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan

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Vol. 56, Iss. 3 — 15 July 1997

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