Influence of the inhomogeneous strain relaxation on the optical properties of etched quantum wires

Inhomogeneous strain relaxation in quantum wires etched from biaxially strained quantum wells is calculated. Characteristic features of the strain field are systematically discussed as a function of wire dimensions and illustrated with various semiconductor systems either under compressive or tensile strain. We provide a general relaxation curve. The shift of the band-gap energy in nanostructures due to the calculated strain field is then predicted and compared to data obtained from optical spectroscopy experiments.