Abstract
We have made phonon measurements of the electron-phonon interaction in a long quantum wire using the phonoconductivity technique. The wire was formed in a GaAs/As heterojunction using the split-gate method. It was subjected to a pulsed beam of nonequilibrium phonons generated by a heater on the opposite side of the substrate. The incident phonon pulses caused a transient increase in the device conductance. The strength of the detected signal displayed giant oscillations as the wire was narrowed by increasing the negative bias on the gate. We give a qualitative account of these observations in terms of phonon-induced delocalization of weakly localized electron states in the wire.
- Received 25 October 1996
DOI:https://doi.org/10.1103/PhysRevB.55.9775
©1997 American Physical Society