Storage of electrons in shallow donor excited states of GaP:Te

S. D. Ganichev, W. Raab, E. Zepezauer, W. Prettl, and I. N. Yassievich
Phys. Rev. B 55, 9243 – Published 15 April 1997
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Abstract

Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly temperature-dependent time constant varying from several microseconds to milliseconds. It is shown that this temporal structure of the signal is due to a storage of carriers in the valley-orbit split 1s(E) shallow donor state. Observation of far-infrared to mid-infrared up-conversion demonstrates that the final step of cascade recombination is achieved by radiative transitions.

    DOI:https://doi.org/10.1103/PhysRevB.55.9243

    ©1997 American Physical Society

    Authors & Affiliations

    S. D. Ganichev, W. Raab, E. Zepezauer, and W. Prettl

    • Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

    I. N. Yassievich

    • A. F. Ioffe Physicotechnical Institute of the Russian Academy of the Sciences, St. Petersburg, 194021, Russia

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    Vol. 55, Iss. 15 — 15 April 1997

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