Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor

A numerical calculation of quantum-well resonant electron-state energies in the bipolar quantum-well resonant-tunneling transistor (BiQuaRTT) is compared with experimental results. From the multiple-peak resonant-tunneling characteristics, the energies of resonant quasibound states of the BiQuaRTT's triangular quantum well are determined. The electron-state energies can be over 1 eV above the conduction-band edge, and are strongly influenced by conduction-band nonparabolicity, producing nearly equally spaced resonances in the BiQuaRTT.