Abstract
Atomic hydrogen interaction with the Si(111)4×1-In surface phase was studied using low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy. Upon hydrogen action mostly Si-In outer bonds are broken and are replaced by Si-H, and In is freed to form islands without Si movement. It was found that the underlying atomic layer of a substrate of the Si(111)4×1-In surface phase has a reconstruction with the same periodicity as the In layer. A structural model of this substrate reconstruction is proposed based on the recently proposed extended Pandey chain model for the Si(111)3×1 Ag- and alkali-metals-induced substrate reconstruction.
- Received 22 August 1996
DOI:https://doi.org/10.1103/PhysRevB.55.5353
©1997 American Physical Society