Binding of biexcitons in GaAs/AlxGa1xAs superlattices

V. Mizeikis, D. Birkedal, W. Langbein, V. G. Lyssenko, and J. M. Hvam
Phys. Rev. B 55, 5284 – Published 15 February 1997
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Abstract

Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninteracting multiple quantum wells of the same width. When the miniband halfwidth exceeds the exciton binding energy, the biexciton binding energy decreases abruptly to the bulk value.

  • Received 28 May 1996

DOI:https://doi.org/10.1103/PhysRevB.55.5284

©1997 American Physical Society

Authors & Affiliations

V. Mizeikis, D. Birkedal, W. Langbein, V. G. Lyssenko, and J. M. Hvam

  • Mikroelektronik Centret, The Technical University of Denmark, DK-2800 Lyngby, Denmark

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Vol. 55, Iss. 8 — 15 February 1997

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