Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells

M. Ramsteiner, R. Hey, R. Klann, U. Jahn, I. Gorbunova, and K. H. Ploog
Phys. Rev. B 55, 5239 – Published 15 February 1997
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Abstract

The localization of excitons in thin GaAs/Al(Ga)As quantum wells has been investigated by micro- and time-resolved photoluminescence (PL) spectroscopy. A fine-structured line shape in micro-PL is found not only for exciton recombination in the GaAs well but also, very similarly, for the Al(Ga)As barrier luminescence. By means of time-resolved measurements we show that the observed barrier luminescence probes selectively a barrier region close to the top interface of the quantum well. Our results directly reveal the essential contribution of Al(Ga)As composition fluctuations to the excition localization in GaAs/Al(Ga)As quantum wells.

  • Received 22 August 1996

DOI:https://doi.org/10.1103/PhysRevB.55.5239

©1997 American Physical Society

Authors & Affiliations

M. Ramsteiner, R. Hey, R. Klann, U. Jahn, I. Gorbunova, and K. H. Ploog

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

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Vol. 55, Iss. 8 — 15 February 1997

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