Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices

J. Kastrup, R. Hey, K. H. Ploog, H. T. Grahn, L. L. Bonilla, M. Kindelan, M. Moscoso, A. Wacker, and J. Galán
Phys. Rev. B 55, 2476 – Published 15 January 1997
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Abstract

Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the doping density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low- and high-field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a different type of tunable GHz oscillator based on semiconductor superlattices.

  • Received 26 April 1996

DOI:https://doi.org/10.1103/PhysRevB.55.2476

©1997 American Physical Society

Authors & Affiliations

J. Kastrup, R. Hey, and K. H. Ploog

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

H. T. Grahn

  • Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan

L. L. Bonilla, M. Kindelan, M. Moscoso, and A. Wacker

  • Escuela Politécnica Superior, Universidad Carlos III de Madrid, Butarque 15, E-28911 Leganés, Spain

J. Galán

  • Departamento de Matemática Aplicada II, Escuela Superior de Ingeniería, Avda. Reina Mercedes s/n, 41012 Sevilla, Spain

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Vol. 55, Iss. 4 — 15 January 1997

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