Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, C. Monier, N. Grandjean, M. Leroux, and J. Massies
Phys. Rev. B 55, 2406 – Published 15 January 1997
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Abstract

Indium segregation in Inx Ga1x As/GaAs (0.3Qc is found to be independent of indium composition x between 0.2 and 0.5 (Qc =0.64±0.01). The exciton wave function is calculated using a variational technique involving a transfer-matrix formalism to study the influence of potential shape on excitonic properties. Only a slight increase in oscillator strength with In segregation is observed for the fundamental excitonic transition.

  • Received 19 July 1996

DOI:https://doi.org/10.1103/PhysRevB.55.2406

©1997 American Physical Society

Authors & Affiliations

P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, and C. Monier

  • Laboratoire des Sciences et Matériaux pour l'Electronique, et d"Automatique, Unitéde Recherche Associée au Centre National

N. Grandjean, M. Leroux, and J. Massies

  • Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia-Antipolis, 06560 Valbonne, France

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Vol. 55, Iss. 4 — 15 January 1997

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