Abstract
We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/As quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I–type-II character of the transition.
DOI:https://doi.org/10.1103/PhysRevB.55.2393
©1997 American Physical Society