Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1xAs double-barrier quantum wells

B. Chastaingt, M. Gurioli, P. Borri, M. Colocci, G. Neu, C. Deparis, J. Massies, and J. Martinez-Pastor
Phys. Rev. B 55, 2393 – Published 15 January 1997
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Abstract

We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/AlxGa1xAs quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I–type-II character of the transition.

    DOI:https://doi.org/10.1103/PhysRevB.55.2393

    ©1997 American Physical Society

    Authors & Affiliations

    B. Chastaingt

    • Centre de Recherche sur l'Hétéroépitaxie et ses Applications, Centre National de la Recherche Scientifique, rue B. Grégory,

    M. Gurioli, P. Borri, and M. Colocci

    • Istituto Nazionale per la Fisica della Materia and Laboratorio Europeo di Spettroscopie Non Lineari, Dipartimento di Fisica,

    G. Neu, C. Deparis, and J. Massies

    • Centre de Recherche sur l'Hétéroépitaxie et ses Applications, Centre National de la Recherche Scientifique, rue B. Grégory,

    J. Martinez-Pastor

    • Departament de Fisica Aplicada, Universitat de Valencia, E-46100 Burjassot, Spain

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    Issue

    Vol. 55, Iss. 4 — 15 January 1997

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