Polarization choices in exciton-biexciton system of GaAs quantum wells

S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, A. Tackeuchi, and M. Nakayama
Phys. Rev. B 55, 1654 – Published 15 January 1997
PDFExport Citation

Abstract

We study the induced absorption due to biexciton formation in absorption bleaching pump-probe signals and the quantum beats between exciton and biexciton in the four-wave-mixing signals. The origin is confirmed by the polarization dependence of the signals in both experiments. The definite discrimination between exciton-biexciton quantum beats and the others by the polarization choices is demonstrated clearly. We also show the well-width dependence of the biexciton binding energy that is determined by the period of the quantum beats in the range of well width 45–150 Å of GaAs/AlxGa1xAs (x=0.3–1.0) multiple quantum wells.

    DOI:https://doi.org/10.1103/PhysRevB.55.1654

    ©1997 American Physical Society

    Authors & Affiliations

    S. Adachi, T. Miyashita, S. Takeyama, and Y. Takagi

    • Department of Material Science, Faculty of Science, Himeji Institute of Technology, 1479-1 Kamigori,

    A. Tackeuchi

    • Fujitsu Laboratories Ltd., Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

    M. Nakayama

    • Department of Applied Physics, Faculty of Engineering, Osaka City University, Sugimoto, Sumiyoshi-ku, Osaka 558, Japan

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 55, Iss. 3 — 15 January 1997

    Reuse & Permissions
    Access Options
    Author publication services for translation and copyediting assistance advertisement

    Authorization Required


    ×
    ×

    Images

    ×

    Sign up to receive regular email alerts from Physical Review B

    Log In

    Cancel
    ×

    Search


    Article Lookup

    Paste a citation or DOI

    Enter a citation
    ×