Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots

Mitsuru Sugawara, Yoshiaki Nakata, Kohki Mukai, and Hajime Shoji
Phys. Rev. B 55, 13155 – Published 15 May 1997
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Abstract

We evaluated the temperature dependence of exciton luminescence spectra and exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots and compared the results with those measured in the In0.18Ga0.82As/GaAs quantum well. We found multiple-peak emission spectra and small, isotropic diamagnetic shifts in the quantum dots, which present a striking contrast to the quantum well. Based on the quantitative analyses of magneto-optical data, we conclude that the self-formed closely stacked InAs/GaAs quantum dot has an almost spherical quantum-confinement potential inside the stacked structure and that its luminescence is due to three-dimensionally confined excitons.

    DOI:https://doi.org/10.1103/PhysRevB.55.13155

    ©1997 American Physical Society

    Authors & Affiliations

    Mitsuru Sugawara, Yoshiaki Nakata, Kohki Mukai, and Hajime Shoji

    • Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

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    Issue

    Vol. 55, Iss. 19 — 15 May 1997

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