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Green's-function approach to the optical nonlinearities in semiconductors and quantum-confined structures

Domenico Campi and Giuliano Colì
Phys. Rev. B 54, R8365(R) – Published 15 September 1996
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Abstract

We introduce a method to calculate the linear and nonlinear optical properties of semiconductors and quantum-confined semiconductor structures. The approach is based on a rigorous and simple formula describing the interband density of states, eventually in the presence of a carrier plasma. It allows us to implement numerical algorithms that run faster than previous methods and to write compact analytical expressions. We show analytically that our approach yields the correct optical properties of quantum wells at vanishing plasma densities (two-dimensional Elliott formula).

  • Received 28 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R8365

©1996 American Physical Society

Authors & Affiliations

Domenico Campi* and Giuliano Colì

  • CSELT-Centro Studi e Laboratori Telecomunicazioni, via Reiss Romoli 274, I-10148 Torino, Italy

  • *Electronic address: DOMENICO.CAMPI@CSELT.STET.IT
  • Permanent address: Università di Lecce, Dipartimento di Scienza dei Materiali, via per Arnesano, I-73 100 Lecce, Italy.

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Issue

Vol. 54, Iss. 12 — 15 September 1996

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