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Resonant ΓXΓ magnetotunneling in GaAs-AlAs-GaAs heterostructures

J. J. Finley, R. J. Teissier, M. S. Skolnick, J. W. Cockburn, R. Grey, G. Hill, and M. A. Pate
Phys. Rev. B 54, R5251(R) – Published 15 August 1996
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Abstract

We report the observation of resonant magnetotunneling between states of different effective mass derived from zone center (Γ) and zone boundary (X) points of the Brillouin zone in single-barrier GaAs/AlAs/GaAs pin heterostructures. Resonances arise in the conductance-bias characteristics for both Landau level index conserving (Δn=0) and nonconserving transfer (Δn=0). For Δn=0 resonances, structure with a splitting proportional to the difference in the cyclotron frequencies (ωcΓωcX) is observed, while for Δn=0 transitions a smaller splitting corresponding to ωcX is reflected. Analysis of these features enables the transverse (Xxy) effective mass in AlAs to be determined. Clear evidence for k conserving and nonconserving transfer in the elastic ΓXz transfer process is reported.

  • Received 17 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R5251

©1996 American Physical Society

Authors & Affiliations

J. J. Finley

  • Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom

R. J. Teissier

  • Laboratoire de Microstructures et Microélectronique, CNRS, 196 Avenue Henri Ravera, 92225

M. S. Skolnick and J. W. Cockburn

  • Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom

R. Grey, G. Hill, and M. A. Pate

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Vol. 54, Iss. 8 — 15 August 1996

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