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Hybridization of single- and double-layer behavior in a double-quantum-well structure

A. G. Davies, C. H. W. Barnes, K. R. Zolleis, J. T. Nicholls, M. Y. Simmons, and D. A. Ritchie
Phys. Rev. B 54, R17331(R) – Published 15 December 1996
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Abstract

We report magnetoresistivity measurements of a narrow-barrier double-quantum-well structure which reveal that when two electron subbands are occupied, the positions of the diagonal resistivity maxima originating from these subbands oscillate together in magnetic field as the electron density is changed to give the overall appearance of a single-layer system. By means of Hartree calculations we demonstrate that this narrow-barrier sample is exhibiting a hybrid behavior between that of a single quantum well and a system comprising two independent quantum wells.

  • Received 28 August 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R17331

©1996 American Physical Society

Authors & Affiliations

A. G. Davies, C. H. W. Barnes, K. R. Zolleis, J. T. Nicholls, M. Y. Simmons, and D. A. Ritchie

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom

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Vol. 54, Iss. 24 — 15 December 1996

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