Abstract
We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicrometer silicon MOSFET's. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and . We point out that this is consistent with the prediction of random -matrix theory for a conductor with single-channel leads in a magnetic field.
- Received 17 June 1996
DOI:https://doi.org/10.1103/PhysRevB.54.R17316
©1996 American Physical Society