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Observation of a D triplet transition in GaAs/AlxGa1xAs multiple quantum wells

S. R. Ryu, Z. X. Jiang, W. J. Li, B. D. McCombe, and W. Schaff
Phys. Rev. B 54, R11086(R) – Published 15 October 1996
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Abstract

Far-infrared magnetospectroscopic studies of quasi-two-dimensional donor impurity states have been carried out on several GaAs/Al0.3Ga0.7As multiple-quantum-well samples with different doping densities in the barrier with constant sheet doping in the well. Two distinct features on the low-frequency side of cyclotron resonance (CR) were observed. Extensive temperature- and carrier-density-dependence studies combined with statistical calculations of the occupancy of the various possible states have led to the assignment of these features to a D triplet transition (∼13 cm1 lower than CR) and the D02p2s transition (∼9 cm1 lower than CR).

  • Received 24 April 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R11086

©1996 American Physical Society

Authors & Affiliations

S. R. Ryu, Z. X. Jiang, W. J. Li*, and B. D. McCombe

  • Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260

W. Schaff

  • School of Electrical Engineering, Cornell University, Ithaca, New York, 14853

  • *Current address: Biocontrol Technology Inc., 300 Indian Spring Rd., Indiana, PA 15701.

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Vol. 54, Iss. 16 — 15 October 1996

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