Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells

Janos Olajos, Jesper Engvall, Hermann G. Grimmeiss, Marcus Gail, Gerhard Abstreiter, Hartmut Presting, and Horst Kibbel
Phys. Rev. B 54, 1922 – Published 15 July 1996
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Abstract

We have investigated the luminescence from monolayer-thick Ge quantum wells pseudomorphic to Si(100) substrates. The electronic structure of these quantum wells was investigated by uniaxial stress, and polarization- and temperature-dependent electroluminescence. By identifying the symmetry and origin of the wave functions involved in the optical transitions, it was found that both the confinement in the thin wells, as well as the interface between the wells and the surrounding material, play an important role for the emission. © 1996 The American Physical Society.

  • Received 21 February 1996

DOI:https://doi.org/10.1103/PhysRevB.54.1922

©1996 American Physical Society

Authors & Affiliations

Janos Olajos, Jesper Engvall, and Hermann G. Grimmeiss

  • Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

Marcus Gail and Gerhard Abstreiter

  • Walter Schottky Institute, Technische Universität München, Am Coulombwall, D-8046 Garching, Federal Republic of Germany

Hartmut Presting and Horst Kibbel

  • Daimler-Benz Research Centre, D-7900 Ulm, Federal Republic of Germany

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Vol. 54, Iss. 3 — 15 July 1996

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