Electric-field-dependent intersubband transition via optical phonons in a doped-thin-layer inserted quantum-well structure

Bing-Lin Gu, Wenhui Duan, Shiying Xiong, and Youjiang Guo
Phys. Rev. B 54, 16983 – Published 15 December 1996
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Abstract

The scattering due to intersubband transition via optical phonons is investigated for a Si-doped-thin-layer inserted GaxAl1xAs quantum-well structure under an applied longitudinal electric field. The subband wave functions of electron states are determined by solving the Schrödinger and Poisson equations self-consistently, and the interface phonon modes are obtained by use of the transfer matrices method on the basis of the dielectric continuum model. The dependence of scattering rates on the position and Al content of inserted layer is clearly demonstrated. It is found that intersubband scattering can be modulated greatly by changing the applied field and adjusting the well structure parameters, which may be useful for some device applications. © 1996 The American Physical Society.

  • Received 25 July 1996

DOI:https://doi.org/10.1103/PhysRevB.54.16983

©1996 American Physical Society

Authors & Affiliations

Bing-Lin Gu and Wenhui Duan

  • China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, China
  • Department of Physics, Tsinghua University, Beijing 100084, China

Shiying Xiong and Youjiang Guo

  • Department of Physics, Tsinghua University, Beijing 100084, China

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Issue

Vol. 54, Iss. 23 — 15 December 1996

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