Electro-optic exciton nonlinearities in Zn1xCdxSe/ZnSe multiple quantum wells

P. V. Giugno, M. De Vittorio, R. Rinaldi, R. Cingolani, F. Quaranta, L. Vanzetti, L. Sorba, and A. Franciosi
Phys. Rev. B 54, 16934 – Published 15 December 1996
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Abstract

The quantum-confined Stark effect (QCSE) in Zn1xCdxSe/ZnSe multiple quantum wells embedded in the intrinsic region of p-i-n photodiodes has been investigated by means of photoluminescence spectroscopy under applied bias and photocurrent spectroscopy. Room-temperature excitonic bleaching is observed at reverse biases as low as 3 V. Both the redshift and the reduction of the oscillator strength of the excitonic emission have been calculated by means of a variational model. We use the same model to clarify the main specific features of the QCSE in II-VI materials. © 1996 The American Physical Society.

  • Received 14 June 1996

DOI:https://doi.org/10.1103/PhysRevB.54.16934

©1996 American Physical Society

Authors & Affiliations

P. V. Giugno, M. De Vittorio, R. Rinaldi, and R. Cingolani

  • Istituto Nazionale per la Fisica della Materia, Unitá di Lecce, Dipartimento di Scienza dei Materiali, Universitá di Lecce, via Arnesano, I-73100 Lecce, Italy

F. Quaranta

  • Istituto Nuovi Materiali per l'Elettronica, CNR, I-73100 Lecce, Italy

L. Vanzetti, L. Sorba, and A. Franciosi

  • Laboratorio Nazionale Tecnologie Avanzate Superfici e Catalisi dell'Istituto Nazionale per la Fisica della Materia, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy

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Issue

Vol. 54, Iss. 23 — 15 December 1996

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