Valley splitting in triangular Si(001) quantum wells

G. Grosso, G. Pastori Parravicini, and C. Piermarocchi
Phys. Rev. B 54, 16393 – Published 15 December 1996
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Abstract

Intervalley splitting in an n-channel Si(001) inversion layer is evaluated by means of a triangular quantum well which simulates the effect of a static electric field. All the microscopic interactions are included in the realistic tight-binding bulk Hamiltonian of the crystal to which the electric field is applied. Eigenvalues and projected densities of states in the triangular well are evaluated from the knowledge of the Green’s function obtained by the renormalization procedure. We find that the valley splitting increases nonlinearly as the external field increases. © 1996 The American Physical Society.

  • Received 27 February 1996

DOI:https://doi.org/10.1103/PhysRevB.54.16393

©1996 American Physical Society

Authors & Affiliations

G. Grosso

  • Dipartimento di Fisica and Istituto Nazionale di Fisica della Materia, Piazza Torricelli 2, I-56126 Pisa, Italy

G. Pastori Parravicini

  • Dipartimento di Fisica and Istituto Nazionale di Fisica della Materia, Via A. Bassi 6, I-27100 Pavia, Italy

C. Piermarocchi

  • Institut de Physique Théorique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland

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Vol. 54, Iss. 23 — 15 December 1996

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