Magnetism of HgSe:Fe

U. Zeitler, A. Wittlin, J. C. Maan, W. Dobrowolski, and A. Mycielski
Phys. Rev. B 54, 15258 – Published 1 December 1996
PDFExport Citation

Abstract

The perpendicular and parallel components of the magnetization of the mixed valence system Hg1xFexSe in the strongly dilute limit (x<103) have been measured in magnetic fields up to 20 T. In this interesting semimagnetic semiconductor the overall magnetization is caused simultaneously by Fe3+ (Brillouin paramagnet), Fe2+ (van Vleck paramagnet), and free electrons (diamagnetic de Haas-van Alphen effect). Using a torque magnetometer the various contributions with their anisotropy are individually determined. For very low iron content (x<2.4×104) the Fe donors exclusively exhibit an isotropic Brillouin paramagnetism of noninteracting Fe3+ ions. For higher concentration Fe2+ also exists. Coexisting with the Brillouin paramagnetism of Fe3+ the Fe2+ reveal an induced van Vleck-type paramagnetism with a crystal-field-induced anisotropy. This anisotropy is analyzed by measuring the induced magnetic moment perpendicular to the magnetic field when applying the field in a nonsymmetric direction of the crystal. Using recent theoretical results on the energy-level diagram of Fe2+ in the Td symmetry of a HgSe host lattice we deduce a spin-orbit level splitting of 2 meV from our experimental data. In contrast to higher concentration samples, both the Brillouin paramagnetism of Fe3+ and the van Vleck paramagnetism of Fe2+ can be attributed to the sum from individual Fe donors with no obvious magnetic interaction between them. Finally, we also have measured de Haas-van Alphen oscillations of the conduction-band electrons with amplitudes of the same order as the paramagnetic background. From the measured crystal-field-induced anisotropy in the magnetic moment we deduce a Fermi-surface anisotropy of about 7%.

  • Received 22 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.15258

©1996 American Physical Society

Authors & Affiliations

U. Zeitler*, A. Wittlin, and J. C. Maan

  • High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, 6525 ED Nijmegen, The Netherlands

W. Dobrowolski and A. Mycielski

  • Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland

  • *Present address: Department of Physics, University of Nottingham, Nottingham NG7 2RD, UK. Electronic address: Ulrich.Zeitler@nottingham.ac.uk
  • Present address: Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland.

References (Subscription Required)

Click to Expand
Issue

Vol. 54, Iss. 21 — 1 December 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×