Abstract
The perpendicular and parallel components of the magnetization of the mixed valence system in the strongly dilute limit () have been measured in magnetic fields up to 20 T. In this interesting semimagnetic semiconductor the overall magnetization is caused simultaneously by (Brillouin paramagnet), (van Vleck paramagnet), and free electrons (diamagnetic de Haas-van Alphen effect). Using a torque magnetometer the various contributions with their anisotropy are individually determined. For very low iron content () the Fe donors exclusively exhibit an isotropic Brillouin paramagnetism of noninteracting ions. For higher concentration also exists. Coexisting with the Brillouin paramagnetism of the reveal an induced van Vleck-type paramagnetism with a crystal-field-induced anisotropy. This anisotropy is analyzed by measuring the induced magnetic moment perpendicular to the magnetic field when applying the field in a nonsymmetric direction of the crystal. Using recent theoretical results on the energy-level diagram of in the symmetry of a HgSe host lattice we deduce a spin-orbit level splitting of 2 meV from our experimental data. In contrast to higher concentration samples, both the Brillouin paramagnetism of and the van Vleck paramagnetism of can be attributed to the sum from individual Fe donors with no obvious magnetic interaction between them. Finally, we also have measured de Haas-van Alphen oscillations of the conduction-band electrons with amplitudes of the same order as the paramagnetic background. From the measured crystal-field-induced anisotropy in the magnetic moment we deduce a Fermi-surface anisotropy of about 7%.
- Received 22 May 1996
DOI:https://doi.org/10.1103/PhysRevB.54.15258
©1996 American Physical Society