Reentrant resonant tunneling

V. V. Kuznetsov, A. K. Savchenko, M. E. Raikh, L. I. Glazman, D. R. Mace, E. H. Linfield, and D. A. Ritchie
Phys. Rev. B 54, 1502 – Published 15 July 1996
PDFExport Citation

Abstract

We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance in between these two peaks becomes possible due to the resonant-tunneling process involving two-electron transitions. We have observed both these effects in GaAs transistor microstructures by studying the time evolution of three adjacent G(Vg) peaks caused by fluctuating occupancy of an isolated impurity (modulator). © 1996 The American Physical Society.

  • Received 6 March 1996

DOI:https://doi.org/10.1103/PhysRevB.54.1502

©1996 American Physical Society

Authors & Affiliations

V. V. Kuznetsov and A. K. Savchenko

  • Department of Physics, Exeter University, Stocker Road, Exeter EX4 4QL, United Kingdom

M. E. Raikh

  • Physics Department, University of Utah, Salt Lake City, Utah 84112

L. I. Glazman

  • Theoretical Physics Institute and Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455

D. R. Mace, E. H. Linfield, and D. A. Ritchie

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 54, Iss. 3 — 15 July 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×