Abstract
We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(). We also demonstrate that an additional higher-order resonance in between these two peaks becomes possible due to the resonant-tunneling process involving two-electron transitions. We have observed both these effects in GaAs transistor microstructures by studying the time evolution of three adjacent G() peaks caused by fluctuating occupancy of an isolated impurity (modulator). © 1996 The American Physical Society.
- Received 6 March 1996
DOI:https://doi.org/10.1103/PhysRevB.54.1502
©1996 American Physical Society