Single-hole dispersion relation for the real CuO2 plane

V. I. Belinicher, A. L. Chernyshev, and V. A. Shubin
Phys. Rev. B 54, 14914 – Published 1 December 1996
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Abstract

Dispersion relation for the CuO2 hole is calculated based on the generalized ttJ model, recently derived from the three-band one. Numerical ranges for all model parameters, tJ=2.42.7, tt=0.0 to 0.25, tt=0.10.15, and three-site terms 2tNtSJ4 have been strongly justified previously. Physical reasons for their values are also discussed. A self-consistent Born approximation is used for the calculation of the hole dispersion. Good agreement between calculated Ek and one obtained from the angle-resolved photoemission experiments is found. A possible explanation of the broad peaks in the experimental energy distribution curves at the top of the hole band is presented.

  • Received 24 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.14914

©1996 American Physical Society

Authors & Affiliations

V. I. Belinicher, A. L. Chernyshev, and V. A. Shubin

  • Institute of Semiconductor Physics, 630090, Novosibirsk, Russia

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Issue

Vol. 54, Iss. 21 — 1 December 1996

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