Numerical calculation of the optical absorption in semiconductor quantum structures

S. Glutsch, D. S. Chemla, and F. Bechstedt
Phys. Rev. B 54, 11592 – Published 15 October 1996
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Abstract

We describe a highly efficient, general-purpose, and easy-to-use method of calculating the optical absorption of semiconductor microstructures. The linear optical susceptibility is obtained by the numerical evaluation of the polarization in real space and real time, using finite differences and the leap-frog scheme. Numerical effort and storage scale as O(N), where N is the number of base elements. The algorithm is suitable for large-scale quantum systems. For illustration, we apply this method to quantum wells in a perpendicular magnetic field, flat quantum dots, superlattices, coupled multiple quantum wells, and excitons on rough interfaces. © 1996 The American Physical Society.

  • Received 12 April 1996

DOI:https://doi.org/10.1103/PhysRevB.54.11592

©1996 American Physical Society

Authors & Affiliations

S. Glutsch and D. S. Chemla

  • Department of Physics, University of California, Berkeley, California 94720
  • Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

F. Bechstedt

  • Friedrich-Schiller-Universität, Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany

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Issue

Vol. 54, Iss. 16 — 15 October 1996

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