Effective-mass theory for InAs/GaAs strained coupled quantum dots

Shu-Shen Li, Jian-Bai Xia, Z. L. Yuan, Z. Y. Xu, Weikun Ge, Xiang Rong Wang, Y. Wang, J. Wang, and L. L. Chang
Phys. Rev. B 54, 11575 – Published 15 October 1996
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Abstract

In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs (100) oriented substrates are studied. At the Γ point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data. © 1996 The American Physical Society.

  • Received 6 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.11575

©1996 American Physical Society

Authors & Affiliations

Shu-Shen Li, Jian-Bai Xia, Z. L. Yuan, and Z. Y. Xu

  • China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, China
  • National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Weikun Ge, Xiang Rong Wang, Y. Wang, J. Wang, and L. L. Chang

  • Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

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Issue

Vol. 54, Iss. 16 — 15 October 1996

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