Reply to ‘‘Comment on ‘Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1xAs multiple quantum wells’’’

Danhong Huang, M. O. Manasreh, and Godfrey Gumbs
Phys. Rev. B 54, 10980 – Published 15 October 1996
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Abstract

The previous Comment makes a valid criticism of our original paper [Huang et al., Phys. Rev. B 52, 14 126 (1995)], but our conclusion is still valid. © 1996 The American Physical Society.

  • Received 30 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.10980

©1996 American Physical Society

Authors & Affiliations

Danhong Huang and M. O. Manasreh

  • Phillips Laboratory (PL/VTRP), 3550 Aberdeen Avenue, Southeast, Building 426, Kirtland Air Force Base, New Mexico 87117

Godfrey Gumbs

  • Department of Physics and Astronomy, Hunter College, City University of New York, 695 Park Avenue, New York, New York 10021

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Vol. 54, Iss. 15 — 15 October 1996

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