Abstract
We report direct measurements of carrier trapping from three-dimensional states into spatially confined one-dimensional states in GaAs quantum wires. In spite of the small wire volume, very fast trapping (≤10 ps) is observed in V-groove wires. Theoretical calculations of trapping via optical-phonon emission, based on an accurate band-structure determination, shows that this arises because of strong overlap of initial extended and final confined electron states.
- Received 12 October 1995
DOI:https://doi.org/10.1103/PhysRevB.53.R4225
©1996 American Physical Society