Abstract
A strong effect of -type modulation doping on the radiative recombination in quantum wells is observed by photoluminescence (PL) spectroscopy. The filling of the Si-Ge quantum wells due to the charge transfer of holes from the modulation doping in the adjacent Si layers causes an appearance of a broad asymmetric PL band with a characteristic sharp high-energy cutoff. A strong enhancement near the Fermi edge is shown, by varying structure parameters and experimental conditions, to correspond to the Fermi-edge singularity. Experimental evidence on the dominant mechanism responsible for the Fermi-edge singularity is given as due to a nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the two-dimensional hole gas.
- Received 11 May 1995
DOI:https://doi.org/10.1103/PhysRevB.53.R1701
©1996 American Physical Society