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Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells

A. Mews, A. V. Kadavanich, U. Banin, and A. P. Alivisatos
Phys. Rev. B 53, R13242(R) – Published 15 May 1996
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Abstract

Epitaxial growth in a CdS/HgS heterostructure of nanometer dimensions, prepared by methods of wet chemistry, is demonstrated. High-resolution transmission-electron microscopy is used to determine the shape and crystallinity of this system consisting of a quantum well in a quantum dot. The homogeneous absorption and fluorescence spectra are investigated by transient hole burning and fluorescence line-narrowing spectroscopy. The photophysical measurements provide evidence for charge-carrier localization within the HgS well.

  • Received 29 January 1996

DOI:https://doi.org/10.1103/PhysRevB.53.R13242

©1996 American Physical Society

Authors & Affiliations

A. Mews, A. V. Kadavanich, U. Banin, and A. P. Alivisatos

  • Department of Chemistry, University of California, Berkeley, California 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720

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Vol. 53, Iss. 20 — 15 May 1996

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