Weak and strong localization in low-dimensional semiconductor structures

S.-R. Eric Yang and J. Rammer
Phys. Rev. B 53, 9568 – Published 15 April 1996
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Abstract

The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence. © 1996 The American Physical Society.

  • Received 16 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.9568

©1996 American Physical Society

Authors & Affiliations

S.-R. Eric Yang

  • Department of Physics, Korea University, Seoul 136-701, Korea
  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A OR6

J. Rammer

  • Department of Theoretical Physics, Umeå University, 901 87 Umeå, Sweden
  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A OR6

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Vol. 53, Iss. 15 — 15 April 1996

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