Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells

Using an ultrahigh-vacuum photoluminescence system, electron-hole recombination on clean reconstructed GaAs(001) surfaces is characterized by measuring photoluminescence spectra of near-surface quantum wells. The luminescence from the quantum well with an As-rich (2×4) surface is stronger than that with a Ga-rich (4×6) surface, showing that the surface recombination is faster with (4×6) than with (2×4). © 1996 The American Physical Society.