Nonlinear piezoelectricity: The effect of pressure on CdTe

R. André, J. Cibert, Le Si Dang, J. Zeman, and M. Zigone
Phys. Rev. B 53, 6951 – Published 15 March 1996
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Abstract

We report the observation of nonlinear piezoelectricity under hydrostatic pressures in a semiconductor. Optical measurements were carried out on CdTe-based piezoelectric quantum wells. At 2.7 GPa the field is changed by a factor of 2, as the result of a strong variation of the piezoelectric coefficient. Such a piezoelectric effect arises because the ionic and electronic contributions to the total polarization nearly cancel, as predicted by a recent ab initio calculation. Similar effects are expected in ZnTe, ZnSe, and InAs, where this near cancellation also occurs. © 1996 The American Physical Society.

  • Received 13 September 1995

DOI:https://doi.org/10.1103/PhysRevB.53.6951

©1996 American Physical Society

Authors & Affiliations

R. André, J. Cibert, and Le Si Dang

  • Laboratoire de Spectrométrie Physique (CNRS URA8), Université J. Fourier-Grenoble I, Boîte Postale 87, 38402 Saint Martin d’Hères Cedex, France

J. Zeman and M. Zigone

  • Laboratoire des Champs Magnétiques Intenses, CNRS/Max-Planck-Institut für Festkörperforschung, Boîte Postale 166X, 38042 Grenoble Cedex, France

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Vol. 53, Iss. 11 — 15 March 1996

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