Microscopic theory of optical gain in small semiconductor quantum dots

Y. Z. Hu, H. Gie\Sen, N. Peyghambarian, and S. W. Koch
Phys. Rev. B 53, 4814 – Published 15 February 1996
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Abstract

A microscopic theory is used to analyze optical gain in small semiconductor quantum dots. Based on a numerical matrix diagonalization method and subsequent solution of the optical Bloch equations, it is found that the quantum-dot gain is dominated by the stimulated transitions between biexciton and exciton states. The calculation shows that Coulomb interaction and valence-band mixing effects significantly influence the spectral and dynamic gain properties in strongly confined quantum dots. © 1996 The American Physical Society.

  • Received 3 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.4814

©1996 American Physical Society

Authors & Affiliations

Y. Z. Hu, H. Gie\Sen, and N. Peyghambarian

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

S. W. Koch

  • Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35112 Marburg, Germany

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Vol. 53, Iss. 8 — 15 February 1996

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