Time-resolved luminescence studies in an n-type ${\mathrm{Zn}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Cd}}_{\mathit{x}}$Se/${\mathrm{ZnS}}_{\mathit{y}}$${\mathrm{Se}}_{1\mathrm{-}\mathit{y}}$ quantum well

The recombination processes in an n-type ${\mathrm{Zn}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Cd}}_{\mathit{x}}$Se/${\mathrm{ZnS}}_{\mathit{y}}$${\mathrm{Se}}_{1\mathrm{-}\mathit{y}}$ quantum well are investigated by time-resolved photoluminescence measurements. The combined analysis of the luminescence decay time and intensity yields the temperature dependence of the radiative and nonradiative recombination time. The quantum efficiency at a low temperature of 8 K is close to unity and the nonradiative recombination rate increases as the temperature is raised. The large effective radiative recombination coefficient of 1.4×${10}^{\mathrm{-}9}$ ${\mathrm{cm}}^3$/s at 300 K is attributed to excitonic enhancement, even at 300 K. © 1996 The American Physical Society.