Intrawell and interwell magnetoexcitons in InxGa1xAs/GaAs coupled double quantum wells

A. B. Dzyubenko and A. L. Yablonskii
Phys. Rev. B 53, 16355 – Published 15 June 1996
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Abstract

We theoretically study the ground and many of the excited optically active s states of spatially direct (intrawell) and indirect (interwell) quasi-two-dimensional excitons in InxGa1xAs/GaAs coupled double quantum wells (DQW’s) in quantizing magnetic fields B≳2 T. The evolution of the eigenstates and oscillator strengths with the perpendicular magnetic B and electric E fields (when, in particular, the direct-indirect crossover and a number of anticrossings occur in the spectra) is studied. The results of the theory are in good agreement with the recently obtained experimental data [L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, and K. Eberl, Phys. Rev. B 52, 12 153 (1995)]. The physical origin of the excitonic symmetric-antisymmetric splittings ΔX in DQW’s is discussed. It is shown that, in the wide-barrier regime, ΔX are determined by the two-particle tunneling through the barrier and suppressed by the excitonic effects. ©1996 The American Physical Society.

  • Received 20 December 1995

DOI:https://doi.org/10.1103/PhysRevB.53.16355

©1996 American Physical Society

Authors & Affiliations

A. B. Dzyubenko

  • Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany
  • General Physics Institute, Russian Academy of Sciences, Moscow 117942, Russia

A. L. Yablonskii

  • General Physics Institute, Russian Academy of Sciences, Moscow 117942, Russia

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Vol. 53, Iss. 24 — 15 June 1996

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