Microscopic excitation spectroscopy for zero-dimensional quantized states of individual InxGa1xAs/AlyGa1yAs quantum dots

M. Notomi, T. Furuta, H. Kamada, J. Temmyo, and T. Tamamura
Phys. Rev. B 53, 15743 – Published 15 June 1996
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Abstract

We investigate the optical transition of a small number of In0.4Ga0.6As quantum dots fabricated by self-organized growth on a (311)B GaAs substrate by microscopic photoluminescence and excitation spectroscopy. The luminescence shows very sharp peaks. By tuning the detection at these peaks, discrete and narrow absorption lines are observed in the excitation spectrum, which are assigned to zero-dimensional (0D) quantized levels. Resonant excitation experiments clarify their discrete nature, which is a manifestation of zero dimensionality. This discreteness allows us to detect a single dot selectively, even when a number of dots are illuminated. Analysis of the homogeneous broadening of these 0D quantized levels indicates that there is no threshold behavior at LO-phonon energy. © 1996 The American Physical Society.

  • Received 28 December 1995

DOI:https://doi.org/10.1103/PhysRevB.53.15743

©1996 American Physical Society

Authors & Affiliations

M. Notomi

  • NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

T. Furuta

  • NTT LSI Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

H. Kamada, J. Temmyo, and T. Tamamura

  • NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

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Vol. 53, Iss. 23 — 15 June 1996

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