Evidence for resonant electron capture and charge buildup in GaAs/AlxGa1xAs quantum wells

K. Muraki, A. Fujiwara, S. Fukatsu, Y. Shiraki, and Y. Takahashi
Phys. Rev. B 53, 15477 – Published 15 June 1996
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Abstract

Evidence for the resonant capture of electrons into quantum wells (QW’s) is demonstrated in the photoluminescence (PL) of GaAs/AlxGa1xAs QW’s doped with Be. We find that the PL intensity ratio between the free-to-bound and excitonic transitions exhibits a strong oscillation as a function of the QW width bearing a striking resemblance to the theoretical prediction of the electron capture rate. It is shown that this PL behavior reflects the buildup of excess negative charge in the QW arising from the different capture efficiencies of electrons and holes. © 1996 The American Physical Society.

  • Received 27 December 1995

DOI:https://doi.org/10.1103/PhysRevB.53.15477

©1996 American Physical Society

Authors & Affiliations

K. Muraki, A. Fujiwara, S. Fukatsu, and Y. Shiraki

  • Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan

Y. Takahashi

  • Department of Electrical and Information Engineering, Yamagata University, Jonan, Yonezawa-shi, Yamagata 992, Japan

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Issue

Vol. 53, Iss. 23 — 15 June 1996

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