Spectroscopic investigations of photoinduced changes of the spatial distribution of charge carriers in modulation-doped quantum-well structures

R. Hartmann, J. Kraus, G. Schaack, and K. Panzlaff
Phys. Rev. B 53, 13011 – Published 15 May 1996
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Abstract

We investigated the photoinduced changes of the spatial distribution of the free holes in p-type modulation-doped GaAs/AlxGa1xAs heterostructures by measuring the energy of the quantum-well luminescence, which is conditioned by the many-particle effect of band-gap renormalization and the excitonic interactions between the electrons and holes. A conventional chopper technique with millisecond time resolution permitted us to study the dynamics of the hole density variations in the quantum wells. The strength of excitonic effects on the luminescence signals could be estimated by application of a magnetic field oriented parallel to the growth direction of the samples. © 1996 The American Physical Society.

  • Received 9 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.13011

©1996 American Physical Society

Authors & Affiliations

R. Hartmann, J. Kraus, and G. Schaack

  • Physikalisches Institut der Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

K. Panzlaff

  • Abteilung Optoelektronik der Universität Ulm, Oberer Eselsberg, D-89069 Ulm, Germany

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Vol. 53, Iss. 19 — 15 May 1996

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