Interband transitions in AlxGa1xAs/AlAs quantum-well structures

S. T. Lee, J. Haetty, A. Petrou, Pawel Hawrylak, M. Dutta, J. Pamulapati, P. G. Newman, and M. Taysing-Lara
Phys. Rev. B 53, 12912 – Published 15 May 1996
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Abstract

We have studied the interband transitions from undoped and modulation-doped Al0.25Ga0.75As/AlAs multiple-quantum-well structures (the latter were doped n type in the Al0.25Ga0.75As layers). Two types of transitions have been observed: Type I associated with electron-hole recombination in the Al0.25Ga0.75As layers and type II between electrons in the Xxy and Xz valleys of the AlAs layers and holes confined in the Al0.25Ga0.75As layers. In undoped samples the luminescence associated with type-II transitions is dominated by phonon replicas. In contrast, the intensities of the zero-phonon Xxyh1 and Xzh1 transitions in modulation-doped samples are comparable to those of the replicas. Under optical pumping the type-II transitions in undoped samples show a pronounced blueshift due to band bending. Under high pumping intensity, the spectra from the undoped samples strongly resemble those from the modulation-doped structures. © 1996 The American Physical Society.

  • Received 9 February 1996

DOI:https://doi.org/10.1103/PhysRevB.53.12912

©1996 American Physical Society

Authors & Affiliations

S. T. Lee, J. Haetty, and A. Petrou

  • Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260

Pawel Hawrylak

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A 0R6

M. Dutta, J. Pamulapati, P. G. Newman, and M. Taysing-Lara

  • Army Research Laboratory, Fort Monmouth, New Jersey 07703

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Issue

Vol. 53, Iss. 19 — 15 May 1996

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