Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells

C. Wetzel, R. Winkler, M. Drechsler, B. K. Meyer, U. Rössler, J. Scriba, J. P. Kotthaus, V. Härle, and F. Scholz
Phys. Rev. B 53, 1038 – Published 15 January 1996
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Abstract

The in-plane effective electron mass (m) in narrow Ga0.47In0.53As/InP quantum wells is strongly dependent on the quantization energy. Cyclotron resonance in a series of quantum wells with well widths down to 15 Å reveals a mass enhancement of up to 50% (m=0.065m0) over the bulk value of Ga0.47In0.53As. This effect is caused by the nonparabolicity of the conduction band and wave function penetration into the barrier material. Our experimental findings are in good agreement with calculations performed within the framework of kp theory. We obtain an easy-to-use relation between the mass and the quantization energy m0/m(ε)=(1-1.96ε/eV)/0.044. © 1996 The American Physical Society.

  • Received 11 September 1995

DOI:https://doi.org/10.1103/PhysRevB.53.1038

©1996 American Physical Society

Authors & Affiliations

C. Wetzel

  • Physik-Department E16, Technische Universität München, James-Franck-Strasse, 85747 Garching, Germany

R. Winkler

  • Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany

M. Drechsler and B. K. Meyer

  • Physik-Department E16, Technische Universität München, James-Franck-Strasse, 85747 Garching, Germany

U. Rössler

  • Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany

J. Scriba and J. P. Kotthaus

  • Sektion Physik, Ludwigs-Maximilians-Universität München, Geschwister-Scholl-Platz, 80539 München, Germany

V. Härle and F. Scholz

  • Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

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Vol. 53, Iss. 3 — 15 January 1996

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