Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1xAs quantum wells

J. L. Sly and D. J. Dunstan
Phys. Rev. B 53, 10116 – Published 15 April 1996
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Abstract

The pressure dependence of the photoluminescence peak energy of InxGa1xAs compressive and tensile strained quantum wells grown on (001) InP is compared with data on compressive strained quantum wells grown on (001) GaAs. The pressure coefficients depend on composition x and on misfit strain ɛ0, and are well described by 10.7-0.5x-85ɛ0 meV/kbar (where ɛ0 is positive for compressive strain). The dependence on misfit strain is unaccounted for by theory. In contrast, in tensile strained quantum wells grown on (111) GaAs there is no dependence on misfit strain. These results suggest that the explanation of the misfit term is to be found, not in electronic band-structure theory, but in a full description of biaxial strain in nonlinear elastic theory. © 1996 The American Physical Society.

  • Received 23 October 1995

DOI:https://doi.org/10.1103/PhysRevB.53.10116

©1996 American Physical Society

Authors & Affiliations

J. L. Sly and D. J. Dunstan

  • Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, England

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Vol. 53, Iss. 15 — 15 April 1996

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