Ballistic composite fermions in semiconductor nanostructures

J. E. F. Frost, C.-T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, and M. Pepper
Phys. Rev. B 53, 9602 – Published 15 April 1996
PDFExport Citation

Abstract

We report the results of two fundamental transport measurements at a Landau level filling factor ν of 1/2. The well-known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B=0 and ν=1/2. The experimental results demonstrate semiclassical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta. © 1996 The American Physical Society.

  • Received 9 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.9602

©1996 American Physical Society

Authors & Affiliations

J. E. F. Frost, C.-T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, and M. Pepper

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 53, Iss. 15 — 15 April 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×