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Optically detected far-infrared resonances in doped GaAs quantum wells

J. Kono, S. T. Lee, M. S. Salib, G. S. Herold, A. Petrou, and B. D. McCombe
Phys. Rev. B 52, R8654(R) – Published 15 September 1995
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Abstract

We have observed a variety of far-infrared resonances, including the transition from the ground state to the first excited state in neutral donors, and singlet and triplet transitions of negative donor ions (D), as well as electron-cyclotron resonance, in well-center-doped GaAs quantum wells, employing a recently developed optical detection technique. The power of this technique for studying impurity states in confined systems is clearly revealed. Results provide evidence for the existence of D centers under optical excitation in multiple-quantum-well structures doped only in the wells.

  • Received 19 April 1995

DOI:https://doi.org/10.1103/PhysRevB.52.R8654

©1995 American Physical Society

Authors & Affiliations

J. Kono, S. T. Lee, M. S. Salib, G. S. Herold, A. Petrou, and B. D. McCombe

  • Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260

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Vol. 52, Iss. 12 — 15 September 1995

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