Abstract
We report observation of positively charged excitons () in GaAs quantum wells remotely doped with acceptors. Upon reducing the excess hole density, by photoexciting carriers in the doped barrier layer, we observe the neutral excitonic transition strengthen relative to . Further confirmation of the assignment is provided by its temperature and magnetic-field dependence. We observe both the antisymmetric (singlet) and symmetric (triplet) spin states.
- Received 19 May 1995
DOI:https://doi.org/10.1103/PhysRevB.52.R5523
©1995 American Physical Society