Universal dissipative resistivity in the fractional quantum Hall effect of two-dimensional hole systems

We have investigated the universality of the discovery of Clark et al. in n-type GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As single heterojunctions (SHJ’s) that the preexponential factor ${\mathrm{\rho }}_{\mathit{xx}}^{\mathit{c}}$ in activation plots of sample resistivity at fractional quantum Hall effect (FQHE) ground states is constant [Phys. Rev. Lett. 60, 1747 (1988)] by performing a systematic electrical transport investigation of a number of high-quality p-type SHJ’s. We find ${\mathrm{\rho }}_{\mathit{xx}}^{\mathit{c}}$=C(h/${\mathit{p}}^2$${\mathit{e}}^2$) for FQHE states at filling factor ν=p/q where C is a constant close to unity, in very good agreement with results reported for n-type SHJ’s demonstrating this phenomenon to be a robust and universal property.